A modern design employing state-of-the-art technologies designed primarily for grid applications - high current, high voltage, high reliability.
- Novel housing solution using a typical hermetically-sealed hockey puck ceramic housing with internal compliance mechanism ensures optimum contact pressure distribution across all chips with standard thyristor heatsink and clamp assemblies and prevents over pressurisation of chips.
- Chip assemblies employ silver sintering technology for improved robustness and improved thermal characteristics.
- New chipset designed and manufactured by Dynex in the UK.
Straightforward flexibility for new and existing designs
The Dynex Press-pack IGBT range is based on a flexible, scalable design. Making it straightforward to produce devices with a variety of contact diameters, current ratings and IGBT: FRD chip ratios. Dynex’s chip design and in-house fabrication capabilities make it possible to tune chipsets to specific applications. Dynex Press-pack IGBT devices are now available at a variety of power levels; up to 2100A at 4500V. Making Dynex the ideal partner for both new and existing designs.
Press-pack IGBTs for HVDC and FACTS
The popularity of insulated gate bipolar transistors (IGBTs) for use in high-voltage direct current (HVDC) transmission and flexible AC transmission systems (FACTS) is increasing. Unfortunately, for these applications, wire-bond IGBT technology has a number of shortcomings, such as insufficient current ratings for the most powerful schemes, and inability to fail to short-circuit. Press-pack IGBT technology, conversely, offers increased current ratings, and an inherent short-circuit failure mode, making it a more attractive choice for HVDC and FACTS.
Further information can be found in the paper Press-pack IGBTs for HVDC and FACTS published in the CSEE JOURNAL OF POWER AND ENERGY SYSTEMS, VOL. 3, NO. 3, September 2017.