Press-pack IGBT

A modern design employing state-of-the-art technologies designed primarily for grid applications - high current, high voltage, high reliability.

Product Range

  • Dynex are able to supply press-pack IGBTs with a range of industry -standard contact diameters from 34mm to 150mm and current ratings from 120A up to 3000A at 4500V.  An integrated research and development and manufacturing facility enables chips and devices to be tailored to customers’ applications.  Their ease of use, high reliability and robustness has made Dynex press-packs the product of choice for a variety of applications,  including HVDC and medium voltage drives.  Interested parties should contact the factory with their requirements.
Product Range

Product Features

  • Dynamic load-balancing (DLB) technology maximises safe operating area, gives high reliability and improves ease of use compared to conventional press-pack IGBT designs
  • Silver-sinter bonding applied to basic units between the chip and adjacent molybdenum platelets ensures outstanding reliability and improved thermal performance
  • Silicone edge passivation applied to Dynex press-pack chips and a hermetically sealed housing give robust high voltage blocking performance
  • A dedicated auxiliary emitter connection ensures synchronisation of gate drive signals between chips, mitigating the effects of power circuit di/dt on the driver circuit. 
Product Features

Advantages of Press-pack IGBTs

Press-pack IGBTs are an alternative to isolated-base wire-bonded plastic modules, relying instead on pressure contacts.  The ease with which press-packs can be stacked makes them the device of choice for applications that require series operation.  Their ratings typically extend to higher currents than modules and, by using pressure contacts instead of wire bonds and solder joints, they typically benefit from higher reliability.  In contrast to wire bonds, which typically fuse and render modules open-circuit in the event of failure, the use of pressure contacts ensures press-packs fail to short circuit.  In the event of a high energy failure, their robust housings offer greater rupture resistance than modules.

Press-pack IGBTs for HVDC and FACTS

The popularity of insulated gate bipolar transistors (IGBTs) for use in high-voltage direct current (HVDC) transmission and flexible AC transmission systems (FACTS) is increasing. Unfortunately, for these applications, wire-bond IGBT technology has a number of shortcomings, such as insufficient current ratings for the most powerful schemes, and inability to fail to short-circuit. Press-pack IGBT technology, conversely, offers increased current ratings, and an inherent short-circuit failure mode, making it a more attractive choice for HVDC and FACTS.

Further information can be found in the paper Press-pack IGBTs for HVDC and FACTS  published in the CSEE JOURNAL OF POWER AND ENERGY SYSTEMS, VOL. 3, NO. 3, September 2017.

Product List

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All-IGBT
Part Number Configuration Vces (V) Ic (A) Vce (sat) @ Tc=25°C (V) Vf @ Tc=25°C (V) Ifsm @ Tc=125°C (kA) Flange OD / Contact OD / Height (mm) More Info
DPI2100P45A5200 All-IGBT 4500 2100 2.4 - - 170 / 125 / 26.5
All-FRD
Part Number Configuration Vces (V) Ic (A) Vce (sat) @ Tc=25°C (V) Vf @ Tc=25°C (V) Ifsm @ Tc=125°C (kA) Flange OD / Contact OD / Height (mm) More Info
DPF2100P45A0052 All-FRD 4500 2100 - 2.4 40.8 170 / 125 / 26.5
Co-Pack
Part Number Configuration Vces (V) Ic (A) Vce (sat) @ Tc=25°C (V) Vf @ Tc=25°C (V) Ifsm @ Tc=125°C (kA) Flange OD / Contact OD / Height (mm) More Info
DPI1200P45C2626 Co-pack configuration 4500 1200 2.6 2.3 20.4 170 / 125 / 26.5
DPI1600P45C3616 Co-pack configuration 4500 1600 2.5 2.5 12.6 170 / 125/ 26.5

Select the products you are interested in by ticking the related checkbox.