A modern design employing state-of-the-art technologies designed primarily for grid applications - high current, high voltage, high reliability.
- Novel housing solution using a typical hermetically-sealed hockey puck ceramic housing with internal compliance mechanism ensures optimum contact pressure distribution across all chips with standard thyristor heatsink and clamp assemblies and prevents over pressurisation of chips.
- Chip assemblies employ silver sintering technology for improved robustness and improved thermal characteristics.
- New chipset designed and manufactured by Dynex in the UK.
- First product will be 4.5kV with 125mm contact diameter rated from 1100A (1:1 IGBT:FRD ratio) to 3000A (all-IGBT)
Straightforward flexibility for new and existing designs
The Dynex Press-pack IGBT range is based on a flexible, scalable design. Making it straightforward to produce devices with a variety of contact diameters, current ratings and IGBT: FRD chip ratios. Dynex’s chip design and in-house fabrication capabilities make it possible to tune chipsets to specific applications. Dynex Press-pack IGBT devices are now available at a variety of power levels; up to 3000A at 4500V. Making Dynex the ideal partner for both new and existing designs.