IGBT Modules

Application Notes

View and download our range of Application Notes generated by our Engineers for Dynex Bipolar and IGBT product family.

Publication Number	App Note Description
AN4839	Clamping of Power Semiconductors
AN4840	Gate Triggering and the Use of Gate Characteristics
AN5001	Use of the VTO - rT On-state Characteristic Model
AN5381	Case Non-Rupture Current Ratings
AN5569	Standard Waveforms
AN5948	Reliability of High Power Bipolar Devices
AN5950	Understanding i2 Phase control Thyristor Datasheets
AN5951	Estimation of Turn-Off Losses in a Thyristor Due to Reverse Recovery
AN6142	Series Thyristor Operation Replacements
AN6143	Parallel Thyristor Operation Replacements
AN6144	Power Electronics: Devices, Applications and Passive Components
AN6145	Fault Finding in Thyristor Equipment
AN6147	Use of Rectifier Diodes at Elevated Temperatures for Short Term Overloads
AN6148	Thyristor Gate Drives
AN6161	Turn-off Time, Leakage Current and Reverse Recovery Current Under Conditions Other than the Datasheet
AN6175	Design of an RC snubber circuit for Dynex i2 Thyristors
AN6184	Effective Thermal Resistance for Repetitive Waveforms
AN6196	Gate Power Calculations
AN6447	Dynex Asymmetric Thyristors for Bypass Applications
AN6481	RC Snubber Design for Dynex Thyristors and Diodes Snubber Simulation Model
AN6531	Guidelines for Series and Parallel Configurations of Press-Pack Thyristors and Diodes

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Publication Number	App Note Description
AN4505	High Voltage IGBT Thermal Budgeting and Module Mounting Guidance
AN5700	Dynex IGBT and FRD Module Naming Convention Explained
AN5945	IGBT Module Reliability
AN5947	Understanding IGBT Module Datasheet
AN6156	Calculating Power Losses in an IGBT Module
AN6353	High Power IGBT Optimization Guide
AN6156	Calculating Power Losses in an IGBT Module
AN6440	Thermal Modelling of IGBT Modules
AN6442	IGBT Module Failure Mechanisms