Dynex Bipolar devices range from 1.3kV to 8.5kV

Bipolar Thyristor

Dynex Thyristor Discrete devices range from 1.3kV to 8.5kV with currents up to 6650A and work reliably at line frequencies from -40°C to 125°C.

Dynex Bipolar Thyristor

Dynex design and manufacture Thyristor Discrete devices tailored for particular applications with lower losses, higher blocking voltages and increased current capability.

Phase Control Thyristors

The Dynex Phase Control Thyristors range from 1200V used with domestic supplies, to 8500V for medium voltage applications. High overload capability ensures the thyristors are suitable for fuseless applications.

Operating at line frequencies where switching losses are small, the low conduction losses of Phase Control Thyristors increase system efficiency.

Phase Control

Phase Control Thyristors Details

The Thyristors can be used in applications that require efficient energy, switching at line frequencies without turn-off capabilities such as power grid and renewable energy.

Dynex Thyristors are typically used in AC to DC converters (Rectifiers) which employ phase control to vary the average voltage on the output of the converter or to switch the AC supply on and off. Operating at line frequencies where switching losses are small, the low conduction losses of phase Control Thyristors enable increased system efficiency.

Designs are tailored for particular applications with lower losses, higher blocking voltages and higher current capability.

Phase Control

Phase Control Thyristor Features

Current ratings from 370A to 7610A
Full blocking voltage capability at line frequencies from -40°C to + 125°C
High surge current capability
High di/dt turn-on capability
High DC blocking stability
Low conduction losses
Low thermal resistance
Excellent pick up performance for parallel operation

Pulse Power Thyristors

Dynex manufacture a range of Pulsed Power thyristors for extremely fast turn-on based on its Gate Turn-Off (GTO) structures. The devices have been designed at 3300V and 4500V at current ratings of 493A to 1670A. The structures are resistant to cosmic ray induced failures at normal working voltages.

Pulse Power Thyristors are designed for extremely high di/dt switching and fast turn-on in combination with a high current capability and high voltages, they can also include special driver units.

Pulse Power Thyristors

Pulse Power Thyristors Details

Dynex Pulse Power Thyristors (PPTs) are based on Dynex’s GTO technology and are designed for long-term stability under DC voltages. The structures are resistant to cosmic ray induced failures at normal working voltages.

The range may be used to connect a source of stored energy such as a capacitor to a load, or to bypass and protect the load in the case of a crowbar circuit. In pulsed power applications where the rate of current is very fast, the pulsed power switch acts as a closing switch and standard phase control thyristors (SCRs) are likely to fail due to the high di/dt experienced.

Pulse Power Thyristors

Pulse Power Thyristors Features

Single or repetitive pulse applications
Very highly interdigitated gate structure
Very high di/dt capability
Fully floating silicon technology
High “shot life”
High reliability / life compares to vacuum tubes
Designed as a closing switch

Asymmetric Bypass Thyristors

Dynex Bypass Thyristors are designed at 3300V and 4500V with current ratings of 2900A and 3200A. The thyristors feature dynamic on-state voltage with overall turn-on time to determine the current diversion from the IGBT diode.

The primary characteristics of the bypass thyristors are dynamic on-state voltage which determines current diversion from the IGBT diode and overall turn-on time.

Asymmetric Bypass Thyristors

Asymmetric Bypass Thyristors Details

Dynex Bypass Thyristor are designed for the protection of IGBT modules in VSC multi-level applications, where a reduced forward blocking voltage is required.

The design of the bypass thyristor provides greater flexibility to the system designer, allowing compactness, better reliability and facilitating a push towards higher scheme voltages.

They are resistant to fast voltage transients, which can be exposed due to the switching of the IGBT diode. The device structures have greater enhanced hardness to cosmic ray induced failures, which become significant at high DC voltage duty cycles.

Asymmetric Bypass Thyristors

Asymmetric Bypass Thyristors Features

Low dynamic on-state voltage for high-performance fault protection
Double side cooling
Enhanced surge rating
High dV/dt capability >10kV/μs
High di/dt capability
Device can be switched from low anode-cathode voltage
FIT rating is orders of magnitude lower than its IGBT companion

Bipolar Thyristor Frequently Asked Questions

What size of snubber circuit design should I use and what are the tradeoffs I need to consider?

Please refer to our Application Notes AN6175 for technical guidance

When might I consider to apply a bipolar based solution?

You should consider the electrical operational conditions for your product such as switching frequency, rail voltages, power dissipation and the likely occurrence of over specification excursions (see AN5948) as bipolar products are robust and more likely to withstand these without failure. The cost and difficulty of service team visits or contractual penalties for non-operation should be considered if applicable. Bipolar devices housed in ‘hockey puck style packages’ are all hermetic devices.

Why is there such a broad range of Qrr (stored charge) and VF (forward voltage drop)?

Dynex ‘s Bipolar datasheets show the full range of Qrr & Vf possible, but you would normally want to enhance. Typically, when evaluating Qrr and VF, the maximum Qrr and minimum VF or the minimum Qrr and maximum VF should be considered in tandem. Once you have defined your system specification you should consult with your local Dynex contact to agree the required Qrr & Vf values for your design.

What makes a Dynex Gate Turn-off Thyristor so reliable?

Dynex Gate Turn-off Thyristors are having a track record for reliability and performance in demanding operational environments such as railway traction. This is achieved by including a frequency test step that screens out potential infant mortality.

How does a gate turn-off thyristor (GTO) work?

A gate turn-off thyristor (GTO) is a high-power semiconductor device. It works by acting as a switch in high voltage circuits. Like a thyristor (SCR Silicon-Controlled Rectifier) it has 3 terminals; anode, cathode and a gate terminal. Both a GTO and SCR have a controlled turn on function via the application of a positive pulse to the gate terminal, but the GTO also has controlled turn-off function by the application of a negative pulse to the gate terminal. An SCR only turns off when the forward current drops below the threshold holding current The turn-off time is typically more than 10 times faster than for an SCR (silicon-controlled rectifier) thyristor.