Bipolar Thyristor

Bipolar Thyristor

Bipolar Thyristor

Bipolar Thyristor

Dynex Thyristor Discrete devices range from 1.3kV to 8.5kV with currents up to 6650A and work reliably at line frequencies from -40°C to 125°C.

IGBT Product

Dynex Bipolar Thyristor

 

Dynex design and manufacture Thyristor Discrete devices tailored for particular applications with lower losses, higher blocking voltages and increased current capability.

Phase Control Thyristors

 

The Dynex Phase Control Thyristors range from 1200V used with domestic supplies, to 8500V for medium voltage applications. High overload capability ensures the thyristors are suitable for fuseless applications.

Operating at line frequencies where switching losses are small, the low conduction losses of Phase Control Thyristors increase system efficiency.

Phase Control

Phase Control Thyristors Details

The Thyristors can be used in applications that require efficient energy, switching at line frequencies without turn-off capabilities such as power grid and renewable energy.

Dynex Thyristors are typically used in AC to DC converters (Rectifiers) which employ phase control to vary the average voltage on the output of the converter or to switch the AC supply on and off. Operating at line frequencies where switching losses are small, the low conduction losses of phase Control Thyristors enable increased system efficiency.

Designs are tailored for particular applications with lower losses, higher blocking voltages and higher current capability.

Phase Control

Phase Control Thyristor Features

  • Current ratings from 370A to 7610A
  • Full blocking voltage capability at line frequencies from -40°C to + 125°C
  • High surge current capability
  • High di/dt turn-on capability
  • High DC blocking stability
  • Low conduction losses
  • Low thermal resistance
  • Excellent pick up performance for parallel operation

Gate Turn Off Thyristors

 

Dynex manufacture GTOs to service the maintenance market that exists due to long service life of traction equipment. Dynex GTO devices range from 1300V to 4500V with current ratings of 225A to 1180A.

Gate Turn Off Thyristors

Gate Turn Off Thyristors Details

The Gate Turn-off Thyristors have an inherent fast turn-on however, are ideally designed to turn off high current making it useful in PWM and chopper circuits.

The range of GTOs are primarily designed for use in railway traction, light rail propulsion drives and auxiliary converters. Suitable applications for GTOs include those requiring on/ off switching of DC in a controlled manner such as, AC motor inverters, choppers and DC-DC converters.

Gate Turn Off Thyristors

Gate Turn Off Thyristors Features

  • Double side cooling
  • High reliability in service
  • High voltage capability
  • Fault protection without fuses
  • High surge current capability
  • Turn-off capability

Pulse Power Thyristors

 

Dynex manufacture a range of Pulsed Power thyristors for extremely fast turn-on based on its GTO structures. The devices have been designed at 3300V and 4500V at current ratings of 493A to 1670A. The structures are resistant to cosmic ray induced failures at normal working voltages.

Pulse Power Thyristors are designed for extremely high di/dt switching and fast turn-on in combination with a high current capability and high voltages, they can also include special driver units.

Pulse Power Thyristors

Pulse Power Thyristors Details

Dynex Pulse Power Thyristors (PPTs) are based on Dynex’s GTO technology and are designed for long-term stability under DC voltages. The structures are resistant to cosmic ray induced failures at normal working voltages.

The range may be used to connect a source of stored energy such as a capacitor to a load, or to bypass and protect the load in the case of a crowbar circuit. In pulsed power applications where the rate of current is very fast, the pulsed power switch acts as a closing switch and standard phase control thyristors (SCRs) are likely to fail due to the high di/dt experienced.

Pulse Power Thyristors

Pulse Power Thyristors Features

  • Single or repetitive pulse applications
  • Very highly interdigitated gate structure
  • Very high di/dt capability
  • Fully floating silicon technology
  • High “shot life”
  • High reliability / life compares to vacuum tubes
  • Designed as a closing switch

Asymmetric Bypass Thyristors

 

Dynex Bypass Thyristors are designed at 3300V and 4500V with current ratings of 2900A and 3200A. The thyristors feature dynamic on-state voltage with overall turn-on time to determine the current diversion from the IGBT diode.

The primary characteristics of the bypass thyristors are dynamic on-state voltage which determines current diversion from the IGBT diode and overall turn-on time.

Asymmetric Bypass Thyristors

Asymmetric Bypass Thyristors Details

Dynex Bypass Thyristor are designed for the protection of IGBT modules in VSC multi-level applications, where a reduced forward blocking voltage is required.

The design of the bypass thyristor provides greater flexibility to the system designer, allowing compactness, better reliability and facilitating a push towards higher scheme voltages.

They are resistant to fast voltage transients, which can be exposed due to the switching of the IGBT diode. The device structures have greater enhanced hardness to cosmic ray induced failures, which become significant at high DC voltage duty cycles.

Asymmetric Bypass Thyristors

Asymmetric Bypass Thyristors Features

  • Low dynamic on-state voltage for high-performance fault protection
  • Double side cooling
  • Enhanced surge rating
  • High dV/dt capability >10kV/μs
  • High di/dt capability
  • Device can be switched from low anode-cathode voltage
  • FIT rating is orders of magnitude lower than its IGBT companion

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