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pcim

pcim

Proudly Exhibiting 

Dynex Module Process Engineer will be presenting at iMAPS - 'Multiple SiC power module for a high frequency aircraft motor drive application'. 

Dynex Power Assemblies will be exhibiting at the Hydrogen Technology Expo 27 - 28 September 2023, Messe Bremen, Germany. The expo is dedicated to discussing advanced technologies for the hydrogen industry.

Product Overview

Renewables

Renewables

DIM1400H1HS17-PA500:   5th Generation Trench Technology IGBT

1700V / 1400A Rated, H1 Module Outline, Half bridge circuit

DIM1000H1HS17-PA500:  5th Generation Trench Technology IGBT

1700V / 1000A Rated,  H1 Module Outline, Half bridge circuit

DIM600M1HS12-PC500  5th Generation Trench Technology IGBT

 1200V / 600A Rated,  M1 Module Outline, Half bridge circuit, automotive qualified 

DIM450M1HS17-PA500  5th Generation Trench Technology IGBT

1700V / 450A Rated M1 Module Outline, Half bridge circuit

DIM500M1HS17-PA500  5th Generation Trench Technology IGBT

1700V / 500A Rated  M1 Module Outline with enhanced I2T Capability

DCR3780: I2Thyristor Fully Floating Technology, 2630A/63mm to 5960A/100mm Pole Face Options

2800V / 3790A 75mm Pole Face, Green H2 electrolyser power supplies

Traction

Traction

TM750HF33X2-F100: SiC Technology 

3300V / 750A Rated, X2  (SLV) Module outline,  half bridge circuit

DIM800DDM17-PS500: 4th Generation SPT+ Technology IGBT 

1700V / 800A rated 130mm x 140mm module outline, dual switch 

DIM1500ESM33-PR500: 4th Generation SPT+ Technology IGBT 

3300V / 1500A  190mm x 140mm module outline, single switch 

TG450HF33: 5th Generation Trench Technology IGBT

3300V / 450A Rated, X1 (SLH) Module outline, half bridge circuit

DG758BX: Asymmetric Gate Controlled Thyristor (GTO)

4500V / 3000A ITCM rating with 3uF snubber

DSF8045SK: Snubber Diode & DSF21545SV Anti-parallel / Free Wheeling Diode

Complementary fast recovery diodes used with 4500V GTO products 

DIM1000ASM65-UF000:  3rd Generation HV Terrace Trench Oxide (TTO) Technology IGBT

6500V / 1000A rated 190mm x 140mm, single switch, 10.2kV isolation 

DIM1200ASM45-TF001: 4th Generation SPT+ Technology IGBT 

4500V / 1200A rated 190mm x 140mm, single switch, 10.2kV isolation 

Industrial

Industrial

DIM1600FSM17-PS500: 4th Generation SPT+ Technology IGBT 

1700V / 1600A rated 130 x 140mm, single switch, low VCEsat

DIM3600ESM17-PT500: 5th Generation Trench Technology IGBT

1700V / 3600A rated 190 x 140mm, single switch

DIM650H2HS17-PA500: 5th Generation Trench Technology IGBT

1700V / 650A, H2 Module outline, half bridge circuit

BCR2520M28: Bidirectional Thyristor 

2800V / 2520A 100mm pole face, two thyristors integrated into one substrate 

TMTC570-18: Thyristor Module

1800V / 570A rated 60mm module size, dual thyristor 

KP15X14F: Anti-parallel Thyristor Module 

1400VDRM / 1200A IOVERLOAD , 123 x 56 x 100mm dimensions 

CAE 8000-45: Gate Commutated Thyristor Device

4500VDRM / 8000A ITGQM, 123 x 56 x 100mm dimensions 

CAE 8000-45: Gate Commutated Thyristor Device Wafer

DCR4330M52  / DCR4000M52   I2 Thyristor Fully Floating Technology

Pre-optimised for low conduction losses or low stored charge applications 

Diode Modules (FRD): Dual & Triple Diode Configurations 

1200V to 6500V rated options 

HVDC

HVDC

TG3000SW45ZC: 4th Generation SPT+ Technology Press Pack IGBT

4500V / 3000A rated, 206 x 206 x 35mm dimensions, hermetically sealed

DIM1200ASM45-TF001: 4th Generation SPT+ Technology IGBT 

4500V / 1200A rated 190mm x 140mm, single switch, 10.2kV isolation 

DIM1000ASM65-UF000: 3rd Generation HV Terrace Trench Oxide (TTO) Technology IGBT

6500V / 1000A rated 190mm x 140mm, single switch, 10.2kV isolation 

DCR4570K83-2566: New HVDC Specific Thyristor Incorporating Latest Technology Innovations  

8300V / 4750A 150mm Pole face, options for 100mm & 125mm Pole face devices

ACR4000WR65: Multilevel VSC Bypass Thyristor for HVDC

6500VRRM / 4020A rated 85mm pole face, very low Cosmic Ray FIT rating 

KPE 4000-85: Thyristor Fully Floating Technology 

8500V / 4000A 134mm pole face, 90kA surge rating @ Tvj = 1100

SiC Technology

SiC Technology

8inch IGBT wafer

Technology development of advanced IGBT technology

100mm dia SiC MOSFET Wafer

3300V rated MOSFET die

H2 Module Outline

Product development, half bridge circuit

X2 (SLV) Module Outline

Product development, half bridge circuit

L2 Module Outline

Product development, half bridge circuit

150mm dia SiC MOSFET Wafer

1200V rated MOSFET die

TM600FF12S3-F1A00: SiC  Module 

1200V / 600A rated S3+ module outline, six pack circuit, PinFin base plate 

Automotive

Automotive

TG400FF08S0-S4A00: 6th Generation Automotive Trench IGBT 

750V / 400A rated S0 module outline, six pack circuit, flat Cu base plate 

TG650FF08S2-S4A01: 6th Generation Automotive Trench IGBT 

750V / 400A rated S2+ module outline, six pack  circuit, PinFin base plate 

TG950FF08S3-S4A01: 6th Generation Automotive Trench IGBT 

750V / 950A rated S3+ module outline, six pack circuit, PinFin base plate 

TG1200FF08S3-R6A01 - 7th Generation Automotive Trench IGBT 

750V/ 1200A rated S3+ module outline, six pack circuit, PinFin base plate

TG820FF08S3P-S4A11: 6th Generation Automotive Trench IGBT 

750V / 820A rated S3+ module outline, six pack circuit, PinFin base plate, press fit pins

TG600FF12S3-S4A01: 6th Generation Automotive Trench IGBT 

1200V / 600A rated S3+ module outline, six pack circuit, PinFin base plate

TG400HF08L2-S4A00: 6th Generation Automotive Trench IGBT 

750V / 400A module outline, half bridge circuit, double sided cooling

TG800HF08L4-S4A00

750V / 800A module outline, half bridge circuit, double sided cooling

DM3022 Inverter for B Level platform requirements

450V / 600A (200kW) peak power rated, 270x 196x 95mm dimensions


Dynex Custom Capability

Dynex Custom Solution Capability: Level 1 Tuned Product

Based on Dynex Standard Products

Dynex Custom Solution Capability: Level 2 Customised Product

Use of standard package range, options for die technology, voltage ratings, circuit topology etc.

Dynex Custom Solution Capability: Level 3 Individual Product

Bespoke package, options for die technology, voltage ratings, circuit topology etc

Power Assemblies

Our bespoke, multi megawatt Hydro dam excitation DC power supplies have enabled renewable energy generation for many years of continuous operation in the harshest of environments. We are now using our expertise to provide highly efficient, high reliability, small footprint solutions for Electrolysis power supplies, working with our partners to find the right solution for their needs.

DSS700SF-B6C-540: Controlled Rectifier with Forced Air Cooling

400Vac rms / 700A rated, Thyristor module based rectifier

KP30X18F: Anti-Parallel Thyristor Module 

1800VDRM / 3310A IOVERLOAD , 179 x 79 x 160mm dimensions 

Superstack Standard Power Switch

Suited to high dI/dt requirements, energy storage connection, load protection, Thyratron & Ignitron replacement

More Information

Existing Product Ranges

 

IGBT

  • Half bridge, chopper, dual, single and bi-directional switch configurations
  • Range from 1.2kV to 6.5kV at 100A to 3600A
  • Working to high reliability within an operating range from -40/-50°C to a maximum of +150°C
  • Low switching losses
  • Low V(cesat) with positive temperature coefficient


IGBT Range   More Information

IGBT Range

FRD Range

 

FRD

  • Modules range from 1.2kV to 6.5kV at 250A to 1200A
  • Designed to work as the input rectifiers for the existing Dynex range of IGBT modules
  • The modules regulate electricity flow to ensure high reliability and increased efficiency in motor drives and other variable speed processes
  • Single, double and triple diode configurations


FRD Range   More Information

 

Bipolar Thyristor Discrete

  • Devices range from 1.3kV to 8.5kV
  • Currents up to 6650A
  • Work reliably at line frequencies from -40°C to 125°C
  • Tailored for particular applications with lower losses, higher blocking voltages and increased current capability.


Bipolar Thyristor Range   More Information

Bipolar Thyristor Range

Bipolar Diode Range

 

Bipolar Diode Discrete

  • Devices range from 1.4kV to 9kV
  • Currents up to 8880A
  • Work reliably at line frequencies from -40°C to 125°C
  • Rugged converters of AC to DC
  • Suitable for industrial, chemical rectifiers and aluminium pot lines.


Bipolar Diode Range   More Information

 

Power Assemblies

  • Design and manufacture of assemblies such as rectifiers and converters,
  • An established supply chain for all components of power assemblies, resistors and capacitors for snubber networks and control circuits
  • Direct access to the company’s wider application, test and product design groups
  • Suitable for customers that require more than the basic semiconductor components


Power Assembly Range   More Information

Power Assemblies