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Thyristor Disc
- Phase Control Up To 1400V
- Phase Control Up To 1800V
- Phase Control Up To 3000V
- Phase Control Up To 5200V
- Phase Control Up To 6500V
- Phase Control Up To 8500V
- Asymmetric Bypass Thyristor
- Pulse Power Thyristor
Gate Turn Off Thyristor
- Gate Turn Off Up To 1300V
- Gate Turn Off Up To 1800V
- Gate Turn Off Up To 2500V
- Gate Turn Off Up To 4500V
IGBT
- Low Voltage Modules Up To 1200V
- Low Voltage Modules Up To 1700V
- High Voltage Modules Up To 3300V
- High Voltage Modules Up To 4500V
- High Voltage Modules Up To 6500V
FRD
- Up To 1200V
- Up To 1800V
- Up To 3300V
- Up To 4500V
- Up To 6500V
Diode Disc
- Rectifier Diode Up To 3000V
- Rectifier Diode Up To 5000V
- Rectifier Diode Up To 9000V
- Fast Recovery Diode Up To 6000V
- Flat Base Rectifier Diode
Power Assemblies
- Standard Power Assembly
- Pulsed Power Assemblies
- Power Factor Correction
- Rail Refurbisment
- Power Assembly Enquiry
- Clamps
- Grid Linked Power Equipment
- Laboratory and Pulsed Power Equipment
- Traction
Resources
- PLECS Models
- Design Tool
- Policies And Procedures
- Your Local Point of Contact
- Technical Articles
- Product Literature
- Application Notes
Exhibitions

Thyristor Disc
Gate Turn Off Thyristor
IGBT
FRD
Diode Disc
Power Assemblies
Resources
Exhibitions

Exhibitions

pcim

Proudly Exhibiting

Dynex Module Process Engineer will be presenting at iMAPS - 'Multiple SiC power module for a high frequency aircraft motor drive application'.

Dynex Power Assemblies will be exhibiting at the Hydrogen Technology Expo 27 - 28 September 2023, Messe Bremen, Germany. The expo is dedicated to discussing advanced technologies for the hydrogen industry.

Product Overview

Renewables

DIM1400H1HS17-PA500: 5^th Generation Trench Technology IGBT

1700V / 1400A Rated, H1 Module Outline, Half bridge circuit

DIM1000H1HS17-PA500: 5^th Generation Trench Technology IGBT

1700V / 1000A Rated, H1 Module Outline, Half bridge circuit

DIM600M1HS12-PC500 5^th Generation Trench Technology IGBT

1200V / 600A Rated, M1 Module Outline, Half bridge circuit, automotive qualified

DIM450M1HS17-PA500 5th Generation Trench Technology IGBT

1700V / 450A Rated M1 Module Outline, Half bridge circuit

DIM500M1HS17-PA500 5^th Generation Trench Technology IGBT

1700V / 500A Rated M1 Module Outline with enhanced I2T Capability

DCR3780: I²Thyristor Fully Floating Technology, 2630A/63mm to 5960A/100mm Pole Face Options

2800V / 3790A 75mm Pole Face, Green H² electrolyser power supplies

Traction

TM750HF33X2-F100: SiC Technology

3300V / 750A Rated, X2 (SLV) Module outline, half bridge circuit

DIM800DDM17-PS500: 4^th Generation SPT+ Technology IGBT

1700V / 800A rated 130mm x 140mm module outline, dual switch

DIM1500ESM33-PR500: 4^th Generation SPT+ Technology IGBT

3300V / 1500A 190mm x 140mm module outline, single switch

TG450HF33: 5^th Generation Trench Technology IGBT

3300V / 450A Rated, X1 (SLH) Module outline, half bridge circuit

DG758BX: Asymmetric Gate Controlled Thyristor (GTO)

4500V / 3000A I_TCM rating with 3uF snubber

DSF8045SK: Snubber Diode & DSF21545SV Anti-parallel / Free Wheeling Diode

Complementary fast recovery diodes used with 4500V GTO products

DIM1000ASM65-UF000: 3^rd Generation HV Terrace Trench Oxide (TTO) Technology IGBT

6500V / 1000A rated 190mm x 140mm, single switch, 10.2kV isolation

DIM1200ASM45-TF001: 4^th Generation SPT+ Technology IGBT

4500V / 1200A rated 190mm x 140mm, single switch, 10.2kV isolation

Industrial

DIM1600FSM17-PS500: 4^th Generation SPT+ Technology IGBT

1700V / 1600A rated 130 x 140mm, single switch, low VCE_sat

DIM3600ESM17-PT500: 5^th Generation Trench Technology IGBT

1700V / 3600A rated 190 x 140mm, single switch

DIM650H2HS17-PA500: 5^th Generation Trench Technology IGBT

1700V / 650A, H2 Module outline, half bridge circuit

BCR2520M28: Bidirectional Thyristor

2800V / 2520A 100mm pole face, two thyristors integrated into one substrate

TMTC570-18: Thyristor Module

1800V / 570A rated 60mm module size, dual thyristor

KP15X14F: Anti-parallel Thyristor Module

1400V_DRM / 1200A I_OVERLOAD , 123 x 56 x 100mm dimensions

CAE 8000-45: Gate Commutated Thyristor Device

4500V_DRM / 8000A _ITGQM, 123 x 56 x 100mm dimensions

CAE 8000-45: Gate Commutated Thyristor Device Wafer

DCR4330M52 / DCR4000M52 I² Thyristor Fully Floating Technology

Pre-optimised for low conduction losses or low stored charge applications

Diode Modules (FRD): Dual & Triple Diode Configurations

1200V to 6500V rated options

HVDC

TG3000SW45ZC: 4^th Generation SPT+ Technology Press Pack IGBT

4500V / 3000A rated, 206 x 206 x 35mm dimensions, hermetically sealed

DIM1200ASM45-TF001: 4^th Generation SPT+ Technology IGBT

4500V / 1200A rated 190mm x 140mm, single switch, 10.2kV isolation

DIM1000ASM65-UF000: 3^rd Generation HV Terrace Trench Oxide (TTO) Technology IGBT

6500V / 1000A rated 190mm x 140mm, single switch, 10.2kV isolation

DCR4570K83-2566: New HVDC Specific Thyristor Incorporating Latest Technology Innovations

8300V / 4750A 150mm Pole face, options for 100mm & 125mm Pole face devices

ACR4000WR65: Multilevel VSC Bypass Thyristor for HVDC

6500_VRRM / 4020A rated 85mm pole face, very low Cosmic Ray FIT rating

KPE 4000-85: Thyristor Fully Floating Technology

8500V / 4000A 134mm pole face, 90kA surge rating @ Tvj = 110⁰C

SiC Technology

8inch IGBT wafer

Technology development of advanced IGBT technology

100mm dia SiC MOSFET Wafer

3300V rated MOSFET die

H2 Module Outline

Product development, half bridge circuit

X2 (SLV) Module Outline

Product development, half bridge circuit

L2 Module Outline

Product development, half bridge circuit

150mm dia SiC MOSFET Wafer

1200V rated MOSFET die

TM600FF12S3-F1A00: SiC Module

1200V / 600A rated S3+ module outline, six pack circuit, PinFin base plate

Automotive

TG400FF08S0-S4A00: 6^th Generation Automotive Trench IGBT

750V / 400A rated S0 module outline, six pack circuit, flat Cu base plate

TG650FF08S2-S4A01: 6^th Generation Automotive Trench IGBT

750V / 400A rated S2+ module outline, six pack circuit, PinFin base plate

TG950FF08S3-S4A01: 6^th Generation Automotive Trench IGBT

750V / 950A rated S3+ module outline, six pack circuit, PinFin base plate

TG1200FF08S3-R6A01 - 7^th Generation Automotive Trench IGBT

750V/ 1200A rated S3+ module outline, six pack circuit, PinFin base plate

TG820FF08S3P-S4A11: 6^th Generation Automotive Trench IGBT

750V / 820A rated S3+ module outline, six pack circuit, PinFin base plate, press fit pins

TG600FF12S3-S4A01: 6^th Generation Automotive Trench IGBT

1200V / 600A rated S3+ module outline, six pack circuit, PinFin base plate

TG400HF08L2-S4A00: 6^th Generation Automotive Trench IGBT

750V / 400A module outline, half bridge circuit, double sided cooling

TG800HF08L4-S4A00

750V / 800A module outline, half bridge circuit, double sided cooling

DM3022 Inverter for B Level platform requirements

450V / 600A (200kW) peak power rated, 270x 196x 95mm dimensions

Dynex Custom Capability

Dynex Custom Solution Capability: Level 1 Tuned Product

Based on Dynex Standard Products

Dynex Custom Solution Capability: Level 2 Customised Product

Use of standard package range, options for die technology, voltage ratings, circuit topology etc.

Dynex Custom Solution Capability: Level 3 Individual Product

Bespoke package, options for die technology, voltage ratings, circuit topology etc

Power Assemblies

Our bespoke, multi megawatt Hydro dam excitation DC power supplies have enabled renewable energy generation for many years of continuous operation in the harshest of environments. We are now using our expertise to provide highly efficient, high reliability, small footprint solutions for Electrolysis power supplies, working with our partners to find the right solution for their needs.

DSS700SF-B6C-540: Controlled Rectifier with Forced Air Cooling

400V_ac rms / 700A rated, Thyristor module based rectifier

KP30X18F: Anti-Parallel Thyristor Module

1800_VDRM / 3310A I_OVERLOAD , 179 x 79 x 160mm dimensions

Superstack Standard Power Switch

Suited to high dI/dt requirements, energy storage connection, load protection, Thyratron & Ignitron replacement

More Information

Existing Product Ranges

IGBT

Half bridge, chopper, dual, single and bi-directional switch configurations
Range from 1.2kV to 6.5kV at 100A to 3600A
Working to high reliability within an operating range from -40/-50°C to a maximum of +150°C
Low switching losses
Low V(cesat) with positive temperature coefficient

IGBT Range More Information

IGBT Range

FRD Range

FRD

Modules range from 1.2kV to 6.5kV at 250A to 1200A
Designed to work as the input rectifiers for the existing Dynex range of IGBT modules
The modules regulate electricity flow to ensure high reliability and increased efficiency in motor drives and other variable speed processes
Single, double and triple diode configurations

FRD Range More Information

Bipolar Thyristor Discrete

Devices range from 1.3kV to 8.5kV
Currents up to 6650A
Work reliably at line frequencies from -40°C to 125°C
Tailored for particular applications with lower losses, higher blocking voltages and increased current capability.

Bipolar Thyristor Range More Information

Bipolar Thyristor Range

Bipolar Diode Range

Bipolar Diode Discrete

Devices range from 1.4kV to 9kV
Currents up to 8880A
Work reliably at line frequencies from -40°C to 125°C
Rugged converters of AC to DC
Suitable for industrial, chemical rectifiers and aluminium pot lines.

Bipolar Diode Range More Information

Power Assemblies

Design and manufacture of assemblies such as rectifiers and converters,
An established supply chain for all components of power assemblies, resistors and capacitors for snubber networks and control circuits
Direct access to the company’s wider application, test and product design groups
Suitable for customers that require more than the basic semiconductor components

Power Assembly Range More Information

Power Assemblies

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SHV our Next Generation HV ½ bridge package
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