The DIM900H2HS12-PA500 and DIM650H2HS17-PA500 are half bridge 1200V and 1700V, generation 5-trench gate IGBT modules with enhanced field stop and implantation technology.
The IGBT modules offer wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand.
Incorporating an electrically isolated base plate and low inductance construction, the IGBT devices enable circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
The H2 package dimensions are designed to scale 172 x 89 x 38mm, and weigh 900g.
The IGBT modules have a chip Junction temperature operating range from -40°C to a maximum of 150°C. Suitable for applications within industrial, renewable and traction markets.
They encompass a high reliability soldering system and solder layer uniformity control technology, to strengthen thermal cycling capability. In addition, they offer ultrasonic terminal welding technology with low impedance, large load capacity and strong resistance to mechanical shock.
Key features include;
- Trench Gate IGBT
- Cu Base with Al2O3 Substrates
- High Thermal Cycling Capability
- 10μs Short Circuit Withstand
- High Current Density
- Low Vce(sat) Variant
Applications include;
- Motor Drives
- High Power Converters
- Renewable Energy Power Conversion
- High Reliability Inverters
The range of high-power IGBT modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 3600A.