Application Notes

Please select from the Power or IGBT product family below and click the desired description for your PDF download.


Publication Number                                                       Description

AN4506                                   Calculating the Junction Temperature of Power Semiconductors

AN4839                                   Clamping of Power Semiconductors

AN4840                                   Gate Triggering and the Use of Gate Characteristics

AN4853                                   Thyristor/Diode Measurement with a Multimeter

AN4869                                   Guidance for Formulating Technical Enquiries

AN4870                                   Effects of Temperature on Thyristor Performance

AN4999                                   Turn-On Performance of Thyristors in Parallel

AN5001                                   Use of the VTO - rT On-state Characteristic Model

AN5177                                   Improved Gate Drive for GTO Series Connections

AN5369                                   Selection of SCRs for Parallel Operation

AN5381                                   Case Non-Rupture Current Ratings

AN5569                                   Standard Waveforms

AN5948                                   Reliability of High Power Bipolar Devices

AN5950                                   Understanding I2 Phase Control Thyristor Datasheets

AN5951                                   Estimation of Turn-Off Losses in a Thyristor Due to Reverse Recovery

AN6142                                   Series Thyristor Operation Replacements

AN6143                                   Parallel Thyristor Operation Replacements

AN6144                                   Power Electronics: Devices, Applications and Passive Components

AN6145                                   Fault Finding in Thyristor Equipment

AN6147                                   Use of Rectifier Diodes at Elevated Temperatures for Short Term Overloads

AN6148                                   Thyristor Gate Drives

AN6161                                   Turn-off Time, Leakage Current and Reverse Recovery Current Under Conditions Other than the Datasheet

AN6175                                   Design of an RC snubber circuit for Dynex i2 Thyristors

AN6184                                   Effective Thermal Resistance for Repetitive Waveforms

AN6196                                   Gate Power Calculations


Publication No.                      Description

AN4502                                   IGBT Electrostatic Handling Precautions

AN4503                                   An Introduction to IGBT Operation

AN4505                                   Heatsink Issues for IGBT Modules

AN4507                                   Gate Drive Considerations for Maximum IGBT Efficiency

AN5700                                   Dynex IGBT and FRD Module Naming Convention Explained

AN5945                                   IGBT Module Reliability

AN5947                                   Understanding IGBT Module Datasheets

AN6156                                   Calculating Power Losses in an IGBT Module