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Application Notes - Power - Bipolar



We have grouped the application notes in product families, please select product family from the options below for a list of available application notes.

Power SOSSAWs

BipolarIGBT

Publication Number Description
AN5381 Case non-rupture current ratings
AN4506 Calculating the junction temperature of power semiconductors
AN4571 GDU9X-XXXXX, for use with GTO gate drive units
AN4840 Gate triggering and the use of gate characteristics
AN4869 Guidance for formulating technical enquiries
AN5177 Improve gate drive for GTO series connections
AN4839 Recommendations for clamping power semiconductors
AN5369 Selection of SCRs for parallel operation
AN5569 Standard waveforms
AN4870 The effect of temperature on thyristor performance
AN4853 Thyristor and diode measurement with a multi-meter
AN4999 Turn-on of thyristors in parallel
AN5001 Use of the VTO, rT on-state characteristic model
AN5370 Using avalanche diodes without sharing capacitors


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