We have grouped the application notes in product families, please select
product family from the options below for a list of available
application notes.
| Power | SOS | SAWs |
| Bipolar | IGBT |
| Publication Number | Description |
|---|---|
| AN4506 | Calculating the junction temperature of power semiconductors |
| AN4571 | GDU9X-XXXXX, for use with GTO gate drive units |
| AN4840 | Gate triggering and the use of gate characteristics |
| AN4869 | Guidance for formulating technical enquiries |
| AN5177 | Improve gate drive for GTO series connections |
| AN4839 | Recommendations for clamping power semiconductors |
| AN5369 | Selection of SCRs for parallel operation |
| AN5569 | Standard waveforms |
| AN4870 | The effect of temperature on thyristor performance |
| AN4853 | Thyristor and diode measurement with a multi-meter |
| AN4999 | Turn-on of thyristors in parallel |
| AN5001 | Use of the VTO, rT on-state characteristic model |
| AN5370 | Using avalanche diodes without sharing capacitors |
| AN5948 (new) | Reliability of High Power Bipolar Devices |
| AN5950 (new) | Understanding I2 Phase Control Thyristor Datasheet |
| AN5951 (new) | Estimation of turn-off losses in a thyristor due to reverse recovery |
| Copyright © 2010 Dynex Semiconductor Copyright © 1995-2010 I-Next Ltd |
We welcome your comments about this service, please send them to: power_solutions@dynexsemi.com |