i2 the New Generation Thyristors (SCRs)

i2 Thyristors (SCRs)

Totally new aluminium implant process
- Compatible with very high voltages

High voltage Phase Control Thyristors (SCRs) and Diodes
- To 8.5kV in Gen. 1 and above in longer term

Reduced switching and conduction losses

Improved thermal performance

Increased focus on overload capacity for Thyristors (SCRs)
- Driven by trend for equipments to be rated on overload capability

Design features of New Products

Optimised silicon resistivity and thickness

Fully floating silicon and pulley wheel bevels

Improved shorting patterns
- Better Tq / Vf trade off
- Lower Qrr for same forward volt drop
- Lower turn-on losses

Increased active silicon area

Lower thermal resistances

Thermal Resistance

Larger basic unit and increase active silicon area gives lower Vf and thermal resistance.

Lower thermals yields
- Higher average current IT(AV)
- Higher surge ratings, I2t and IFSM

Example of i2 product compared to previous designs

Previous product: DCR1595SW42
- IT(AV) = 3020A @ Tc = 60°C
- ITSM = 49kA from Tj = 125°C
- Rth(j-c) d.c. = 0.008°C/W
- Tq < 900µs @ 1A/µs
- VTM < 1.8V @ 4000A, 125°C

i2 Product: DCR4100W42
- IT(AV) = 4100A @ Tc = 60°C ( +36% )
- ITSM = 53.5kA from Tj = 125°C ( +9% )
- Rth(j-c) d.c. = 0.0063°C/W ( -27%)
- Tq < 500µs @ 1A/µs ( -44%)
- VTM < 1.55V @ 4000A, 125°C ( -14%)

The i2 Matrix

The Advantage of i2

Lower conduction losses.

Lower switching losses.

Lower thermal resistance.

Higher average current and surge ratings.

For more information on how i2 products can improve your system please e-mail us at power_solutions@dynexsemi.com and include i2 in the subject field.


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